CJD200 npn cjd210 pnp surface mount complementary silicon power transistors description: the central semiconductor CJD200, cjd210 types are complementary silicon power transistors manufactured in a surface mount package designed for high current amplifier applications. marking: full part number maximum ratings: (t c =25c unless otherwise noted) symbol units collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 8.0 v continuous collector current i c 5.0 a peak collector current i cm 10 a continuous base current i b 1.0 a power dissipation p d 12.5 w power dissipation (t a =25c) p d 1.4 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance jc 10 c/w thermal resistance ja 89.3 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =40v 100 na i cbo v cb =40v, t c =125c 100 a i ebo v eb =8.0v 100 na bv ceo i c =10ma 25 v v ce(sat) i c =500ma, i b =50ma 0.3 v v ce(sat) i c =2.0a, i b =200ma 0.75 v v ce(sat) i c =5.0a, i b =1.0a 1.8 v v be(sat) i c =5.0a, i b =1.0a 2.5 v v be(on) v ce =1.0v, i c =2.0a 1.6 v h fe v ce =1.0v, i c =500ma 70 h fe v ce =1.0v, i c =2.0a 45 180 h fe v ce =2.0v, i c =5.0a 10 f t v ce =10v, i c =100ma, f=10mhz 65 mhz c ob v cb =10v, i e =0, f=0.1mhz (CJD200) 80 pf c ob v cb =10v, i e =0, f=0.1mhz (cjd210) 120 pf dpak transistor case r2 (4-january 2010) www.centralsemi.com
CJD200 npn cjd210 pnp surface mount complementary silicon power transistors dpak transistor case - mechanical outline lead code: b) base c) collector e) emitter c) collector marking: full part number www.centralsemi.com r2 (4-january 2010)
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